MOSFET Exploits Ribbon Technology - Electronic Design Europe

Technologies
- Analog
- Communications
- Components
- Digital ICs
- EDA
- Embedded
- Power
- Test
Design Hotspots
Resources
Magazine
eBooks & Whitepapers
Shows
- NI Week
- MTT-S
- DAC
- MD&M
- PCIM
- SID
- IEF
- ESC
- CTIA
- APEC
- All Shows
Jobs
More...
- eBooks
- Whitepapers
- Webcasts
- Job Zone
- Newsletters
- Blogs
- Hall of Fame
- RSS
- Subscribe

	Home	Current Issue	Back Issues	Subscribe/Renew

Email this Article

Printer-Friendly

Reader Comments

[Web Exclusive]
MOSFET Exploits Ribbon Technology

Staff
ED Online ID #18071
January 24, 2008

GENEVA, SWITZERLAND—A power MOSFET developed by STMicroelectronics takes advantage of the company’s ribbon-bonding technology. This delivers a low typical RDS(on) of 800 micro-ohms, which ST claims is a new industry bench¬mark for high-current MOSFETs.

The STV300NH02L, a 20V device, is suited to reducing secondary rectification losses in high-efficiency dc-dc converters. It provides good protection under short-circuit conditions, with a low turn-off time.