Electronic Design
Home Current Issue Back Issues Subscribe/Renew
Email this Article    Printer-Friendly    Reader Comments   

[Web Exclusive]
A Model Agreement

Staff
ED Online ID #17961
January 10, 2008

Munich, Germany — GenISys and the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) will join forces to develop and license advanced 3D resist modeling techniques for e-beam and proximity lithography. Under terms of their agreement, GenISys will integrate the 3D resist modeling technologies developed by Fraunhofer IISB’s Lithography Simulation Group into GenISys’ products for proximity lithography for microsystems and e-beam lithography. As structures continue to shrink, absolute accuracy on the wafer becomes increasingly critical. Resist process effects substantially impact the resolution of nanometre e-beam lithography, and standard proximity effect correction based solely on electron scattering is falling short. "We decided to leverage Fraunhofer’s almost 20 years of experience and proven expertise in resist modeling for advanced projection lithography honoured by working with the industry’s leading IC manufacturers," says Ulrich Hofmann, founder and general manager of GenISys. GenISys also announced that PEC pioneer Nikola Belic is to join the company’s power team as senior development engineer. Belic is best known as the developer of Proxecco PEC software. Pic caption: Ulrich Hofmann, founder and general manager, GenISys



POST YOUR COMMENTS HERE

Name:

Email:


Rate this article:

 less useful more useful 
1
2
3
4
5
Your Comments:


PartFinder

Find real-time pricing, stock status, same-day/next-day shipping options and more. Brought to you by Digi-Key. Go to PartFinder.    
GlobalSpec

PART SEARCH :
Powered by: GlobalSpec - The Engineering Search Engine
Sponsored Links

Electronic Design Europe Electronic Design China EEPN Power Electronics Auto Electronics Microwaves & RF RF Design
Schematics Find Power Products Military Electronics Featured Vendors EE Events Free Design Resources